CHA6558-99F Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 28-32GHz HPA 2W

CHA6558-99F
RoHS COMPLIANT
28-32GHz HPA 2W
GaAs Monolithic Microwave IC
Description
The CHA6558-99F is a monolithic four
stages GaAs high power amplifier, designed
for Ka-Band applications.
The circuit is dedicated to telecommunication
and VSAT, SATCOM and is also well suited _{RF IN}
for a wide range of microwave applications
and systems.
It is developed on a robust 0.15µm gate
length pHEMT process, via holes through the
substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
RF OUT
Main Features
■ Broadband performances: 28-32GHz
39
■ 21dB Linear Gain
■ 33dBm output power @3dB compression.
■ 23% PAE@ 3dB compression
37
35 Pout @Saturation
33
31
29
■ DC bias: Vd=6Volt@Id=1.4A
■ Chip size 3.46x2.71x0.07mm
27
25
PAE @Saturation
23
21
19
Linear Gain
17
15
28
29
30
31
32
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
28
32 GHz
Gain Linear Gain
21
dB
Pout Output Power @3dB compression
33
dBm
PAE Power added efficiency
23
%
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. DSCHA6558-QAG2251 - 07 Sep 12
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]