CHA6550-QXG Datasheet, PDF (1/18 Pages) United Monolithic Semiconductors – 17.0- 23.6GHz Power Amplifier

CHA6550-QXG
17.0- 23.6GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6550-QXG is a three stage
m2pdIt.oeo5istsensWocidbtlaioeltethrst.iicggoEnauGSeitnpDaduAcptfosorpnorhottirewPgochoeltirianop.ntnoItdswTiseoainrrhtePecigiogirnhcirncaluytltuietlRdispneareadoda.diprou,ocwawi_{YnnietdhgAr YU3W6M68W78SYYAAWUG6MW5Y}Y_{Y5SAAAY}Y_Y0UUU333WW_{W666MMM686868W}W_{W7878SS78SAAAG}G_G
K band.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
36 lead 6x5 mm QFN package
It is supplied in RoHS compliant SMD
package.
Main Features
UMS³⁶
■ Broadband performances: 17.0- 23.6GHz
34
■ 34dBm saturated power
32
■ 41dBm OIP3
30
■ 22dB gain
28
■ DC bias: Vd = 6.0Volt @ Id = 1.3A
26
■ QFN 6x5
24
22
■ MSL3
20
Output power & PAE vs frequency
Psat
P1dB
PAE at Psat.
18
16
16
17
18
19
20
21
22
23
24
25
Frequency (GHz)
A3687A ^{Main Electrical Characteristics}
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
Psat Saturated output power
OIP3 Output IP3
Min Typ Max Unit
17.0
23.6 GHz
22
dB
34
dBm
41
dBm
Ref. : DSCHA6550-QXG6159 - 07 Jun 16
1/18
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone] - www.ums-gaas.com