CHA6518_09 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 5 - 18 GHz High Power Amplifier

CHA6518
RoHS COMPLIANT
5 - 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
Main Features
The CHA6518 is a monolithic three-stage
GaAs high power amplifier designed for wide
band applications.
This device is manufactured using a UMS
0.25 µm Power pHEMT process, including,
via holes through the substrate and air
bridges.
To simplify the assembly process:
• the backside of the chip is both RF and
DC grounded
• bond pads and back side are gold plated
for compatibility with eutectic die attach
method and thermosonic or
thermocompression bonding process.
0.25 µm Power pHEMT Technology
5 - 18 GHz Frequency Range
2W Output Power
24 dB nominal Gain
Quiescent Bias point: 8V ; 1A
Chip size: 5.23 x 3.26 x 0.07 mm
Vg
Vd
Vg
Vg
Vd
50Ω _Input
matching
IN
Inter-
stage
Stage 1 /
Stage 2
Inter -
stage
Stage 2 /
Stage 3
Output 50Ω
combiner
OUT
Vd
Main Characteristics
Vg Vd
Vd = 8 V
Vg Vd
Tamb = +25°C (Tamb is the back-side of the chip)
Symbol
Parameter
F_op Operating frequency range
P_sat Saturated output power
G_lin Linear gain
Min
Typ Max
5
18
33.5
24
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Unit
GHz
dBm
dB
Ref. : DSCHA65185007 - 7 Jan 05
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]