CHA6362-QXG Datasheet, PDF (1/16 Pages) United Monolithic Semiconductors – 17.7 - 19.7GHz Power Amplifier

CHA6362-QXG
17.7 - 19.7GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6362-QXG is a three stage
monolithic GaAs high power circuit producing
2.5 Watt output power. It integrates a power
detector and allows gain control. ESD
protections are included.
It is designed for Point To Point Radio or
K-band Sat- Com application.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
It is supplied in RoHS compliant SMD
package.
Main Features
■ Frequency range: 17.7- 19.7GHz
■ 34.5dBm saturated power
■ 42dBm OIP3
■ 22dB gain
■ DC bias: Vd = 6.0Volt @ Id = 1.34A
■ QFN5x6
■ MSL3
Power & PAE
36
34
32
30
Psat P1dB PAE sat
28
26
24
22
20
17
17.5
18
18.5
19
19.5
20
20.5
21
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
Psat Saturated output power
OIP3 Output IP3
Min Typ Max Unit
17.7
19.7 GHz
22
dB
34.5
dBm
42
dBm
Ref. : DSCHA6362-QXG5190 - 09 Jul 15
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]