CHA6358-99F00 Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – GaAs Monolithic Microwave IC

CHA6358-99F
27-31.5GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6358-99F is a three stages
monolithic HPA that typically provides an
output power of 31dBm at 1dB gain
compression associated to a high IP3 output
of 38.5dBm.
It is designed for a wide range of
applications, from professional to commercial
communication systems
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
It is available in chip form.
Vg1a Vd1a Vg2a Vd2a Vg3a Vd3a
RF in
Vg1b Vd1b Vg2b Vd2b Vg3b Vd3b
RF out
Main Features
■ Broadband performances: 27-31.5GHz
■ Pout: 31dBm at 1dB compression
■ OIP3: 38.5dBm
■ Linear gain: 22dB
■ DC bias: Vd=6.0Volt@Id=750mA
■ Chip size: 2.5x2.5x0.1mm
36
34
32
30
28
26
27
50
40
30
20
P-1dB Psat PAE at 1dB
28 29 30 31
Frequency (GHz)
10
0
32
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
OIP3 Output third order interception point
Pout Output Power @1dB comp.
Min Typ Max Unit
27.0
31.5 GHz
22
dB
38.5
dBm
31
dBm
Ref. : DSCHA63583058 - 27 Feb 13
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]