CHA6356-QXG_15 Datasheet, PDF (1/16 Pages) United Monolithic Semiconductors – 21.2 - 23.6GHz Power Amplifier

CHA6356-QXG
21.2 - 23.6GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6356-QXG is a three stage
monolithic GaAs high power circuit producing
2 Watt output power. It integrates a power
UMS detector and allows gain control. ESD
protections are included.
A366878A _{It is designed for Point To Point Radio or}
YYWWG
AU6M3^YY5S^AA_A^YY6_U^U33₃^WW66_6M^M6868₆₈^WW7878_S^S₇₈^AA_A^GG
K-band Sat-Com application.
YYWW^YYWG^{WUMS}
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
It is supplied in RoHS compliant SMD
package.
Main Features
Power & PAE
36
■ Frequency range: 21.2- 23.6GHz
34
UMS ■ 33.5dBm saturated power
32
■ 42dBm OIP3
30
■ 20dB gain
■ DC bias: Vd = 6.0Volt @ Id = 1.3A
28
■ QFN5x6
26
■ MSL3
24
22
20
21
Psat
P1dB
PAE at Psat.
21.5
22
22.5
23
23.5
24
Frequency (GHz)
Main Electrical Characteristics
A3687A ^{Tamb.= +25°C}
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
Psat Saturated output power
OIP3 Output IP3
Min Typ Max Unit
21.2
23.6 GHz
20
dB
33.5
dBm
42
dBm
Ref. : DSCHA6356-QXG5113 - 23 Apr 15
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]