CHA6194-QXG Datasheet, PDF (1/16 Pages) United Monolithic Semiconductors – 37- 40GHz Power Amplifier

CHA6194-QXG
37- 40GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6194-QXG is a four stage
monolithic GaAs high power circuit producing
1.2 Watt output power. It is highly linear, with
possible gain control and integrates a power
detector. ESD protections are included.
It is designed for Point To Point Radio or
K-band Sat-Com application.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
It is supplied in RoHS compliant SMD
package.
36 lead 6x5 mm QFN package
Main Features
■ Broadband performances: 37-40GHz
■ 31dBm saturated power
■ 38dBm OIP3
■ 20dB gain
■ DC bias: Vd = 6.0Volt @ Id = 0.8A
■ QFN5x6
■ MSL3
Output power vs frequency
35
34
33
32
31
30
29
28
P1dB
Psat
27
26
25
36
37
38
39
40
41
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
Psat Saturated output power
OIP3 Output IP3
Min Typ Max Unit
37
40 GHz
20
dB
31
dBm
38
dBm
Ref. : DSCHA6194-QXG6130 - 09 May 16
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone] - www.ums-gaas.com