CHA6105_15 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 8-12GHz Driver Amplifier

CHA6105
RoHS COMPLIANT
8-12GHz Driver Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6105 is a monolithic three-stage
medium power amplifier designed for
X-band applications.
The driver provides typically 31.5dBm
output power at saturation and is suitable
for systems requiring a high compression
level. Moreover it includes a biasing
control circuit that makes Pout less
sensitive to spread and chip environment.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
Frequency range: 8-12GHz
31.5dBm Saturated output power
30dB Linear Gain
Quiescent bias point: 8V@700mA
Chip size: 2.80 x 2.21 x 0.07mm
Main Characteristics
Tamb = +20°C, Vc = +8V (Pulse 25µs 10%)
VD1
VD2
●
IN
Control circuit
VD3
●
OUT
VD3
V_C
34
1100
33
Pout (dBm) @ 3dBc
1050
32
(dBm)
1000
31
950
30
900
29
850
28
800
27
750
26
700
25
Linear Gain (dB)
24
Id (mA) @ 3dBc
650
(%)
600
23
550
22
500
7 7,5 8 8,5 9 9,5 10 10,5 11 11,5 12 12,5 13
Frequency (GHz)
Pout & Id @ 3dB gain compression
and Linear Gain (Pulse 25µs 10% Tamb. 20°C)
Symbol
Parameter
Min
Fop
Operating frequency range
8
G
Small signal gain
Psat
Saturated output power
Idq
Power supply quiescent current
Typ
Max
12
30
31.5
700
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Unit
GHz
dB
dBm
mA
Ref. : DSCHA61050106 - 16 Apr 10
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]