CHA6015-99F Datasheet, PDF (1/14 Pages) United Monolithic Semiconductors – 2-8GHz High Power Amplifier

CHA6015-99F
2-8GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6015-99F is a HPA that provides
typically 37.5dBm output power on the
frequency band 2-8GHz. The circuit is
dedicated to defence applications and also
well suited for a wide range of microwave
applications and systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■ Broadband performances: 2-8GHz
■ Linear Gain: 18.5dB
■ Pout at 3dB compression : 37.5dBm
■ PAE at 3dB compression : 29%
■ DC bias: Vd=7Volt@Id=2A
■ Chip size: 4.68x6.53x0.07mm
Main Electrical Characteristics
Tamb.= +25°C, Vd = 7V, Id (Quiescent) = 2A, CW
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
2
8 GHz
Gain Linear Gain
18.5
dB
P_3dB
PAE_3dB
Output Power @3dB gain compression
Power Added Efficiency @ 3dB gain
compression
37.5
29
dBm
%
Ref. : DSCHA60153347 - 13 Dec 13
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE -
France
Tel.: [phone] - Fax: [phone]