CHA6005-99F Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 8-12GHz High Power Amplifier

CHA6005-99F
8-12GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6005-99F is a high power amplifier
monolithic circuit, which integrates two
stages and produces 32.5dBm output power
associated to a high power added efficiency
of 38%.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■ High power : 32.5dBm
■ High PAE : 38%
■ Frequency band : 8-12GHz
■ Linear gain : 22dB
■ DC bias: Vd=8Volt@Id=350mA
■ Chip size 3x1.5x0.1mm
34
600
32
550
30
500
28
450
Linear Gain (dB)
26
Pout @ Pin=14 dBm (3dBcomp)
400
Idrain @ Pin=14 dBm (3dBcomp)
24
350
22
300
20
250
18
200
8
8.5
9
9.5 10 10.5 11 11.5 12
Freq (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
G
Linear Gain
P1dB Output Power @ 3dB comp.
PAE Power Added Efficiency @ 3dB comp.
Min Typ Max Unit
8
12 GHz
22
dB
31.5
dBm
38
%
Ref. : DSCHA60052244 - 31 Aug 12
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]