CHA5390 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 24-30GHz Medium Power Amplifier

CHA5390
24-30GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5390 is a high gain broadband four-
stage monolithic medium power amplifier. It is
designed for a wide range of applications, from
military to commercial communication
systems. The backside of the chip is both RF
and DC grounded. This helps simplify the
assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
• Broadband performances : 24-30GHz
• 25dBm output power.
• 24dB gain
• Good broadband matchings
• Low DC power consumption, 460mA @ 5V
• Chip size : 2.99 X 1.31 X 0.10 mm
Typical in JIG measurements :
15
30
10
25
5
20
0
15
-5
10
-10
5
-15
0
-20
-5
-25
-10
22
24
26
28
30
32
Frequency (GHz)
Input Rloss : grey solid line - Output Rloss : dash line.
Main Characteristics
Tamb. = 25°C
Parameter
Min Typ Max Unit
Fop Operating frequency range
G
Small signal gain
P01 Output power at 1dB gain compression
Id
Bias current
24
30
21
24
24
25
460
720
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
GHz
dB
dBm
mA
Ref. : CHA53901012 - 12-Jan.-01
1/8
Specifications subject to change without notice
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