CHA5297 Datasheet, PDF (1/4 Pages) United Monolithic Semiconductors – 37-40GHz High Power Amplifier

CHA5297
37-40GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5297 is a three-stage monolithic high
power amplifier. It is designed for a wide range
of applications, from military to commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Vd1
Vd2
Vg3
Vd3
IN
OUT
Vg1 Vg2 Vd2
Vg3
Vd3
Main Features
■ Performances : 37-40GHz
■ 28dBm output power @ 1dB comp. gain
■ 10 dB ± 1dB gain
■ DC power consumption, 1.6A @ 3.5V
■ Chip size : 4.16 x 2.6 x 0.05 mm
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop
Operating frequency range
G
Small signal gain
P1dB
Output power at 1dB gain compression
Id
Bias current
Min Typ Max Unit
37
40
GHz
10
dB
28
dBm
1.6
A
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52972149 - 29-May-02
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]