CHA5295_03 Datasheet, PDF (1/9 Pages) United Monolithic Semiconductors – 24.5-26.5GHz High Power Amplifier

CHA5295
RoHS COMPLIANT
24.5-26.5GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5295 is a high gain three-stage
monolithic high power amplifier. It is designed for
a wide range of applications, from military to
commercial communication systems. The
backside of the chip is both RF and DC grounds.
This help simplifies the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam gate
lithography.
It is available in chip form.
Vd1 Vd2
Vg1 Vg2 Vd2
Vg3 Vd3
Vg3 Vd3
Main Features
■ Performances : 24.5-26.5GHz
■ 31dBm output power @ 1dB comp.
■ 18 dB ± 1dB gain
■ DC power consumption, 800mA @ 6V
■ Chip size : 4.01 x 2.52 x 0.05 mm
32
30
28
26
24
22
20
18
16
14
12
10
24,5
Pout@3dB (dBm)
PAE@1dB (%)
Pout@1dB (dBm)
Linear Gain (dB)
25
25,5
26
26,5
27
Frequency (GHz)
27,5
Typical on jig Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop
Operating frequency range
G
Small signal gain
P1dB
Output power at 1dB gain compression
Id
Bias current
Min Typ Max Unit
24.5
26.5 GHz
17
18
dB
30
31
dBm
800
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52953125 - 05 May 03
1/9
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]