CHA5294 Datasheet, PDF (1/6 Pages) United Monolithic Semiconductors – 30-40GHz Medium Power Amplifier

CHA5294
RoHS COMPLIANT
30-40GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5294 is a high gain four-stage monolithic
Vd1 Vd2
medium power amplifier. It is designed for a wide
range of applications, from military to commercial
communication systems. The backside of the chip is _IN
both RF and DC grounded. This helps to simplify the
assembly process.
Vd3 Vd4
OUT
The circuit is manufactured with a PM-HEMT
process, 0.15µm gate length, via holes through the
substrate, air bridges and electron beam gate
lithography.
It is available in chip form.
30
28
Main Features
26
Vg1 Vg2 Vg3 Vg4
Typical on jig Measurements
Linear Gain (dB)
¦ Performances : 30-40GHz
¦ 24dBm output power @ 1dB comp.
¦ 26 dB gain
¦ DC power consumption, 500mA @ 4V
¦ Chip size : 4.10 x 1.42 x 0.07 mm
24 Pout@-1dB (dBm)
22
20
18
16
30
32
34
36
38
40
Frequency GHz
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min Typ Max Unit
Fop
Operating frequency range
30
40
GHz
G
Small signal gain
26
dB
P1dB
Output power at 1dB gain compression
24
dBm
Id
Bias current
500
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52946237 - 25 Aug 06
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]