CHA5293A Datasheet, PDF (1/7 Pages) United Monolithic Semiconductors – 17-24GHz High Power Amplifier

CHA5293a
17-24GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5293a is a high gain three-stage
monolithic high power amplifier. It is designed for
a wide range of applications, from military to
commercial communication systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Vd1 Vd2 Vg3 Vd3
Vg1,2 Vd2 Vg3 Vd3
25
20
15
Main Features
10
5
■ Performances : 17-24GHz
■ 30dBm output power @ 1dB comp. gain
0
■ 17 dB ± 1dB gain
-5
■ DC power consumption, 800mA @ 6V
-10
■ Chip size : 4.01 x 2.52 x 0.05 mm
-15
-20
12
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop
Operating frequency range
G
Small signal gain
P1dB
Output power at 1dB gain compression
Id
Bias current
S22
S11
14
16
18
20
22
24
26
28
Frequency (GHz)
Typical on jig Measurements
Min Typ Max Unit
17
24
GHz
16
17
dB
29
30
dBm
800
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52932123 -03-May-02
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]