CHA5292A Datasheet, PDF (1/6 Pages) United Monolithic Semiconductors – 37-40GHz Medium Power Amplifier

CHA5292a
37-40GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5292a is a high gain four-stage
monolithic medium power amplifier. It is
designed for a wide range of applications, from
military to commercial communication ^IN
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Vd1 Vd2
Vd3 Vd4
OUT
Vg1 Vg2 Vg3 Vg4
Typical on jig Measurements
Main Features
■ Performances : 37-40GHz
■ 24dBm output power @ 1dB comp. gain
■ 24 dB ± 1dB gain
■ DC power consumption, 500mA @ 3.5V
■ Chip size : 3.43 x 1.44 x 0.07 mm
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
24
20
16
12
8
4
0
-4
-8
-12
-16
S21 (dB)
S11 (dB)
S22 (dB)
-20
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
Min Typ Max Unit
Fop
Operating frequency range
37
40
GHz
G
Small signal gain
24
dB
P1dB
Output power at 1dB gain compression
24
dBm
Id
Bias current
500
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52922149 - 29-May-02
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]