CHA5290 Datasheet, PDF (1/6 Pages) United Monolithic Semiconductors – 17.7-24GHz Medium Power Amplifier

CHA5290
17.7-24GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5290 is a high gain four-stage
monolithic medium power amplifier. It is
designed for a wide range of applications, from
military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
■ Performances : 17.7 -24GHz
■ 26dBm output power @ 1dB comp. gain
■ 26 dB ± 1dB gain
■ DC power consumption, 400mA @ 6V
■ Chip size : 3.43 x 1.57 x 0.05 mm
Vd1
Vd2 Vd3
Vd4
Vg1,2
Vg3 Vg4
Vd4
34
30
26
22
18
14
10
6
2
-2
-6
-10
-14
-18
-22
-26
S11 (dB)
S21 (dB)
S22 (dB)
-30
14
16
18
20
22
24
26
28
30
32
34
Frequency (GHz)
Typical on jig Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop
Operating frequency range
G
Small signal gain
P1dB
Output power at 1dB gain compression
Id
Bias current
Min Typ Max Unit
17.7
24
GHz
26
dB
26
dBm
400
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. DSCHA52902295 -22-Oct.-02
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]