CHA5266-QDG_15 Datasheet, PDF (1/14 Pages) United Monolithic Semiconductors – 10-16 GHz Medium Power Amplifier

CHA5266-QDG
10-16 GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA5266-QDG is a three stage
monolithic GaAs medium power amplifier.
It is designed for a wide range of
applications, from professional to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
U_UMMS_S
A^A3⁵6²68⁶78⁶A
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Main Features
■ Broadband performances: 10-16GHz
■ 23dB Linear Gain
■ 25.5dBm output power @ 1dB comp.
■ 35dBm output IP3
■ DC bias: Vd=5.0Volt@Id=320mA
■ 24L-QFN4x4
■ MSL1
30
25
20
S21
15
10
S11
5
S22
0
-5
-10
-15
-20
-25
-30
2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Freq (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
OIP3 Output TOI
Pout Output Power @1dB comp.
Min Typ Max Unit
10
16 GHz
23
dB
35
dBm
25.5
dBm
Ref. : DSCHA5266-QDG3233 - 21 Aug 13
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]