CHA5266-99F Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – 10-16 GHz Medium Power Amplifier

CHA5266-99F
10-16 GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5266-99F is a three stage
monolithic GaAs Medium Power Amplifier
that produces 23dB linear gain and 36dBm
OIP3.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■ Broadband performances: 10-16GHz.
■ 23dB Linear Gain.
■ 26.5dBm output power @ 1dB comp.
■ 36dBm OIP3.
■ DC bias: Vd=5.0Volt@Id=360mA.
■ Chip size 1.81x1.37x0.1mm.
RF IN
VD1
VD2
VD3
RF OUT
VG1
VG2
VG3
30
25
20
S21
15
S11
10
S22
5
0
-5
-10
-15
-20
-25
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
OIP3 Output IP3
Pout Output Power @1dB comp.
Min Typ Max Unit
10
16 GHz
23
dB
36
dBm
26.5
dBm
Ref. : DSCHA52666274 - 30 Sep 16
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone] - www.ums-gaas.com