CHA5250-QDG_15 Datasheet, PDF (1/16 Pages) United Monolithic Semiconductors – 5.5-9GHz Medium Power Amplifier

CHA5250-QDG
5.5-9GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA5250-QDG is a three stages
monolithic GaAs medium power circuit, close
to 1 Watt output power.
It is designed for commercial communication
systems.
The circuit is manufactured with a pHEMT
process, 0.5µm gate length.
Main Features
■ Broadband performances: 5.5-9GHz
■ 26dB Linear Gain
■ 28dBm output power @1dB comp.
■ 36dBm output TOI
■ 30% PAE@1dB compression
■ DC bias: Vd=7Volt@Id=280mA
■ 24L-QFN4x4
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
0
Gain & RLoss
S11
S21
S22
5
10
15
20
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
OTOI Output TOI
Pout Output Power @1dB comp.
Min Typ Max Unit
5.5
9.0 GHz
26.0
dB
36.0
dBm
28.0
dBm
Ref. : DSCHA5250-QDG-Full-2355 - 20 Dec 12
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]