CHA5197A Datasheet, PDF (1/6 Pages) United Monolithic Semiconductors – 21-26.5GHz Medium Power Amplifier

CHA5197a
RoHS COMPLIANT
21-26.5GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
Vd1
Vd2
Vd3
Vd4
The CHA5197a is a high gain four-stage
monolithic medium power amplifier. It is
designed for a wide range of applications, from
military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps to simplify the
assembly process.
The circuit is manufactured with a Power
pHEMT process, 0.25µm gate length, via holes
through the substrate, air bridges and electron
beam gate lithography.
It is available in chip form.
Main Features
■ Performances: 21-26.5GHz
■ 27.5dBm saturated output power
■ 28 dB gain
■ DC power consumption, 550mA @ 6V
■ Chip size: 3.35x1.41x 0.07 mm
■ BCB Layer protection
Main Characteristics
Tamb. = 25°C
Typical on jig Measurements
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain
P_sat Saturated Output power
Id
Bias current
Min Typ Max
21
26.5
28
27.5
550
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Unit
GHz
dB
dBm
mA
Ref. . DSCHA5197a7173 - 22 Jun 07
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]