CHA5115-QDG Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – X-band Medium Power Amplifier

CHA5115-QDG
RoHS COMPLIANT
X-band Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5115-QDG is a monolithic two-stage
GaAs medium power amplifier designed for
X-band applications.
The MPA provides typically 28dBm output
power associated to 30% power added
efficiency at 3dB gain compression.
It is supplied in RoHS compliant SMD package.
U_UM_MS _S
Y_YYA^AW_Y^53WW1^6168W^785A_G
Main Features
 Frequency band: 8-12GHz
 Output power: 28dBm @ 3dBcomp
 Linear gain: 21.5dB
 High PAE: 30% @ 3dBcomp
 Quiescent bias point: Vd=8V, Id=190mA
 24L-QFN4x4
 MSL3
35
33
31
29
27
25
23
21
19
17
15
7
25
23
21
19
17
15
13
PAE_3dBcomp @ Temp=25°C
11
Pout_3dBcomp @ Temp=25°C
9
Linear Gain @ Temp=25°C
7
5
8
9
10
11 12 13
Frequency (GHz)
Main Characteristics
Tamb = 20°C, Vd = 8V, Id (Quiescent) = 190mA, Drain Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min Typ Max Unit
Fop
Operating frequency range
8
12 GHz
PAE_P-3dB Power added efficiency @3dBcomp & 20°C
30
%
P-3dB Output power @ 3dBcomp @ 20°C
28
dBm
Ref. : DSCHA5115-QDG1199 - 18 Jul 11
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]