CHA5115-99F_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – X-band Medium Power Amplifier

CHA5115-99F
RoHS COMPLIANT
X-band Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5115-99F is a monolithic two-stage
GaAs medium power amplifier designed for
X-band applications.
The MPA provides typically 29dBm output
power associated to 39% power added
efficiency at 3dB gain compression.
This device is manufactured using 0.25µm ^IN
Power pHEMT process, including, via holes
through the substrate and air bridges.
It is available in chip form.
Vg
Vd1
Vd2
OUT
Main Features
 0.25µm Power pHEMT Technology
 Frequency band: 8-12GHz
 Output power: 29dBm @ 3dBcomp
 Linear gain: 25dB
 High PAE: 39% @ 3dBcomp
 Noise Factor: 5dB typ.
 Quiescent bias point: Vd=8V, Id=0.19A
 Chip size: 2.37x1.82x0.07mm
44
PAE @ 3dB comp
42
40
38
36
34
32
Pout @ 3dB comp
30
28
26
Linear Gain
24
22
20
8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0
Frequency (GHz)
Main Characteristics
Tamb =+25°C, Vd =8V, Id (Quiescent) =190mA, Drain Pulse width =100µs, Duty cycle = 20%
Symbol
Parameter
Min Typ Max Unit
Fop
Operating frequency range
8
12 GHz
PAE_P_-3dB
P_-3dB
Power added efficiency @ 3dB comp
Output power @ 3dB comp
39
%
29
dBm
Ref. : DSCHA51154120 - 30 Apr 14
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]