CHA5056 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 17-27GHz High Power Amplifier

CHA5056
RoHS COMPLIANT
17-27GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5056 is three-stage monolithic high
power amplifier.
The backside of the chip is both RF and DC
grounds. This helps to simplify the assembly
process.
The circuit is manufactured with a power PHEMT
process, 0.15µm gate length, via holes through
the substrate.
It is supplied in chip form.
Main Features
■ Broadband performance 17-27GHz
■ 21dB Linear Gain
■ ESD protected
■ 29dBm Output Power @1dB compression
■ DC power consumption @1dB compression:
940mA@4.5V
■ Chip size: 3.15 x 2.2 x 0.1mm
Vd1
Vd2
Vd3
RFin
RFout
Vg1,2
Vg3 Vd3
P1dB and Linear Gain versus Frequency
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
16 17 18 19 20 21 22 23 24 25 26 27 28
Frequency (GHz)
Typical On Wafer Measurement
Main Characteristics
Tamb. = 25°C, Vd = 4.5V
Symbol
Parameter
Min
Typ
Max
Fop
Operating frequency range
17
27
G
Small signal gain
21
P1dB
Output power @ 1dB gain compression
29
Id1dB
Drain current @ 1dB gain compression
940
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Unit
GHz
dB
dBm
mA
Ref: DSCHA50567211 - 30 Jul 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]