CHA5056-QGG Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – 17-27GHz High Power Amplifier

CHA5056-QGG
RoHS COMPLIANT
17-27GHz High Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA5056-QGG is a three-stage
monolithic high power amplifier.
The circuit is manufactured with a power P-
HEMT process, 0.15µm gate length, via holes
through the substrate.
It is supplied in RoHS compliant SMD
package
Main Features
■ Broadband performance 17-27GHz
■ 28.5dBm Output Power @1dB compression
■ 38dBm 3^rd order intercept point
■ High gain: 19dB
■ ESD protected (see page 6)
■ DC power consumption, 890mA @ 4.5V
■ 28LQFN5x5
Glin & P1dB & Psat versus Frequency
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
Gain Linear (dB)
P1dB (dBm)
Psat (dBm)
15
16 17 18 19 20 21 22 23 24 25 26 27
Freq (GHz)
Typical on board measurements
Main Characteristics
Tamb = +25°C, Vd1=Vd2=Vd3= +4.5V, Id (Quiescent)=89 0mA
Symbol
Parameter
F_op Operating Frequency Range
P_1dB Output power at 1dB compression
G_lin Linear Gain
Min
Typ Max
17
27
28.5
19
Unit
GHz
dBm
dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA5056QGG7033 - 02 Feb 07
1/12
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
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/Specifications subject to change without notice