CHA5052 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 7-16GHz High Power Amplifier

CHA5052
RoHS COMPLIANT
7-16GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5052 is a three-stage monolithic high
power amplifier.
The backside of the chip is both RF and DC
grounds. This helps to simplify the assembly
process.
The circuit is manufactured with a power P-HEMT
process, 0.15µm gate length, via holes through
the substrate.
It is supppplied in chip form
Main Features
■ Broadband performance 7-16GHz
■ High gain: 21dB
■ ESD protections (see page 10)
■ 29dBm Output Power @ 1dB
compression
■ Typical 37dBm 3^rd order intercept point
■ DC power consumption, 700mA @ 5V
Vd1,2
RFi
Vd3
RFou
Vg1,2
Vg3Vd3
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
5
Gain and Return Losses versus frequency
dB(S11)
dB(S21)
dB(S22)
6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Typical on jig measurements
Main Characteristics
Tamb. = 25°C, Vd = 5V
Symbol
Parameter
Min Typ Max
Fop
Operating frequency range
7
16
G
Small signal gain
21
P1dB
Output power at 1dB gain compression
29
Id
Power Supply quiescent current
700
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Unit
GHz
dB
dBm
mA
Ref. : DSCHA50527092 - 02 Apr 07
1/10
Specifications subject to change without notice
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