CHA5052-QGG Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 7-16GHz High Power Amplifier

CHA5052-QGG
RoHS COMPLIANT
7-16GHz High Power Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA5052-QGG is a three-stage
monolithic high power amplifier.
The circuit is manufactured with a power P-
HEMT process, 0.15µm gate length, via holes
through the substrate.
It is supppplied in RoHS compliant SMD
package.
Main Features
■ Frequency range 7-16GHz
■ Gain: 19dB
■ 37dBm 3^rd order intercept point
■ 29dBm Output Power @1dB compression
■ ESD protected (see page 7)
■ DC power consumption, 700mA @ 5V
■ 28LQFN5x5
32
31
30
29
28
P1dB (dBm)
27
26
25
24
23
Linear Gain (dB)
22
21
20
19
18
17
16
15
14
6
7
8
9 10 11 12 13 14 15 16
Frequency (GHz)
Typical on board measurements
Main Characteristics
Tamb. = 25°C, Vd = 5V
Symbol
Parameter
Fop
G_lin
P1dB
OIP3
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Output IP3
Min Typ Max Unit
7
16 GHz
19
dB
29
dBm
37
dBm
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA5052QGG7033 - 02 Feb 07
1/10
/Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]