CHA5050-99F_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 17-26GHz Medium Power Amplifier

CHA5050-99F
17-26GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5050-99F is a four stage monolithic
MPA that provides typically 25.5dBm of
output power associated to 20% of power
added efficiency at 3dB gain compression.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
 0.25µm Power pHEMT Technology
 Frequency band: 17-26GHz
 Output power: 25.5dBm @ 3dBcomp
 Linear gain: 22dB
 Quiescent bias point: Vd=6V, Id=230 mA
 Chip size: 2.38x1.14x0.07mm
Main Electrical Characteristics
Tamb =+25°C,
Vd = 6V, Id (Quiescent) = 230 mA, CW mode.
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
Pout Output Power @1dB comp.
Min Typ Max Unit
17.0
26.0 GHz
22.0
dB
25.0
dBm
Ref.: DSCHA50502152 - 31 May 12
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]