CHA5014-99F_15 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – X Band HBT Driver Amplifier

CHA5014-99F
RoHS COMPLIANT
X Band HBT Driver Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5014 chip is a monolithic two-
stage medium power amplifier designed for
X band applications. Moreover this
amplifier is relevant for systems that
require an output power weakly sensitive to
temperature.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridges. A nitride
layer protects the transistors and the
passive components.
A special control circuit is implemented to
stabilize the output power in temperature.
Main Features
■ 30dBm Saturated output power
■ Temperature compensated Output power
■ Two biasing modes:
- Digital control thanks to TTL interface
- Analog control thanks to Biasing circuit
■ Quiescent bias point: 8.5V@230mA
■ Chip size: 2.87 x 1.37 x 0.1mm³
Pout & PAE @ 1dBc and Linear Gain (Tamb 20°C)
Main Characteristics
Tamb = +20°C, Vc = +8.5V (Pulse 100µs 20%)
Symbol
Parameter
Min Typ Max
Fop
Operating frequency range
8.5
11
G
Small signal gain
20
P1dB
Output power at 1dB gain compression
29
Icq
Power supply quiescent current
230
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Unit
GHz
dB
dBm
mA
Ref. : DSCHA50141097 - 07 Apr 11
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]