CHA5010B Datasheet, PDF (1/4 Pages) United Monolithic Semiconductors – X Band Driver Amplifier

CHA5010b
X Band Driver Amplifier
GaAs Monolithic Microwave IC
Description
This CHA5010b is a two-stage monolithic
driver amplifier.
The circuit is manufactured with a
standard MESFET process : via holes
Vg
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
IN
¦ Broadband performance : 9-10.5GHz
¦ 27dBm output power
(pulsed meas., -1dB gain compression)
¦ 15dB gain
¦ ± 1.5dB gain flatness
¦ Chip size : 2,09 x 1,27 x 0.10 mm
Vd
OUT
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G
Pout
Small signal gain
Output power
(Pulsed meas., Pin = +13dBm)
Min Typ Max Unit
9
10.5 GHz
14
15
dB
26
27
dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA50100096 - 05-Apr-00
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]