CHA4250-QDG_15 Datasheet, PDF (1/14 Pages) United Monolithic Semiconductors – 5.5-11GHz Medium Power Amplifier

CHA4250-QDG
5.5-11GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA4250-QDG is a three stages
monolithic GaAs medium power amplifier
circuit.
It is designed for commercial communication
systems.
The circuit is manufactured with a pHEMT
process, 0.5µm gate length.
Main Features
■ Broadband performances: 5.5-11GHz
■ 26dB Linear Gain
■ 23.5dBm output power @1dB comp.
■ 31dBm output TOI
■ 25% PAE@ 1dB compression
■ DC bias: Vd=7Volt@Id=125mA
■ 24L-QFN4x4
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
2
Gain & RLoss
S11
S21
S22
7
12
17
22
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
OTOI Output TOI
Pout Output Power @1dB comp.
Min Typ Max Unit
5.5
11.0 GHz
26.0
dB
31.0
dBm
23.5
dBm
Ref. : DSCHA4250-QDG3021 - 21 Jan 13
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]