CHA4107-QDG_15 Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – C-band Medium Power Amplifier

CHA4107-QDG
C-band Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA4107-QDG is a monolithic two-stage
GaAs medium power amplifier designed for
C-Band applications.
The MPA provides typically 25.5dBm output
power associated to 30% power added
efficiency at 1dB gain compression.
It is supplied in RoHS compliant SMD
package.
U_UM_MS _S
A_A4₃1₆0₆₈₇₈7_A
Y_YYW_YWW_W_G
Main Features
 Frequency band: 4.5-6.5GHz
 Output power: 25.5dBm @ 1dBcomp
 Linear gain: 22.5dB
 High PAE: 30% @ 1dBcomp
 Quiescent bias point: Vd=8V, Id=120mA
 24L-QFN4x4
 MSL3
45
43
41
39
37
35
33
31
29
27
25
23
21
19
17
15
4
25
23
21
19
17
15
13
11
PAE_1dBc @ Temp=25°C
9
Pout_1dBc @ Temp=25°C
7
Linear Gain @ Temp=25°C
5
4.5
5
5.5
6
6.5
Frequency (GHz)
Main Characteristics
Tamb = 25°C, Vd = 8V, Id (Quiescent) = 120mA, Drain Pulse width= 50µs, Duty cycle = 10%
Symbol
Parameter
Min Typ Max Unit
Fop
Operating frequency range
4.5
6.5 GHz
PAE_P-1dB Power added efficiency @1dBcomp & 25°C
30
%
P-1dB Output power @ 1dBcomp @ 25°C
25.5
dBm
Ref. : DSCHA4107-QDG4188 - 07 Jul 14
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]