CHA4094 Datasheet, PDF (1/4 Pages) United Monolithic Semiconductors – 36-40GHz High Power Amplifier

CHA4094
36-40GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA4094 is a high gain broadband three-
stage balanced monolithic power amplifier. It is
designed for a wide range of applications, from
military to commercial communication systems.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
■ Broadband performances
■ 22 dBm output power ( 1dB gain comp. )
■ 9 dB ± 1 dB gain
■ Chip size : 1.65 X 2.05 X 0.10 mm
Typical on wafer measurements :
15
10
Gain
5
0
-5
-10
(dB)_-15
-20
OUT
IN
-25
-30
28 30 32 34 36 38 40 42
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain
P1dB Output power at 1dB gain compression
Id
Bias current
Min Typ Max Unit
36
40
GHz
7
9
dB
22
dBm
750
920
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA40949349 – 15 Dec. 99
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]