CHA4092REF Datasheet, PDF (1/4 Pages) United Monolithic Semiconductors – 20-30GHz High Power Amplifier

CHA4092
20-30GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA4092 is a high gain broadband three-
stage balanced monolithic power amplifier. It is
designed for a wide range of applications, from
military to commercial communication systems.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
þ Broadband performances : 20-30GHz
þ 22 dBm output power ( 1dB gain comp. )
þ 17 dB ± 1.5 dB gain
þ Chip size : 1.65 X 2.15 X 0.10 mm
Typical on wafer measurements :
20
15
Gain
10
5
0
-5
-10
IN
-15
-20
-25
OUT
-30
15
20
25
30
35
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain
P1dB Output power at 1dB gain compression
Id
Bias current
Min Typ Max Unit
20
30
GHz
16
17
dB
22
dBm
700
900
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA40928021
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]