CHA3801-QDG_15 Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – L-Band Low Noise Amplifier

CHA3801-QDG
RoHS COMPLIANT
L-Band Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3801-QDG is an L-Band LNA
monolithic circuit including an active bias
network. Furthermore a protection network is
included in order to allow high input power
survivability.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
U_UMMS_S
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Main Features
■ L-Band performances: 1-2GHz
■ 1.5dB Noise Figure
■ 28dB Linear Gain
■ 17dBm Saturated Power
■ 27dBm Output Third Order Intercept
■ DC bias: Vd = 5Volt @ 70mA
■ 24L-QFN4x4
■ MSL3
― -40°C - - - - +25°C ― - +85°C
Typical Noise Figure versus Temperature
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB comp.
Min Typ Max Unit
1
2 GHz
28
dB
1.5
dB
15
dBm
Ref. : DSCHA3801-QDG3119 - 29 Apr 13
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]