CHA3801-99F_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – L-Band Low Noise Amplifier

CHA3801-99F
RoHS COMPLIANT
L-Band Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3801-99F is an L-Band LNA
monolithic circuit including an active bias
network. Furthermore a protection network is
included in order to allow high input power
survivability.
The circuit is dedicated to space applications,
and also well suited for a range of microwave
applications and systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■ L-Band performances: 1-2GHz
■ 1.45dB Noise Figure
■ 28dB Linear Gain
■ 17dBm Saturated Power
■ 27dBm Output Third Order Intercept
■ DC bias: Vd = 5Volt @ 70mA
■ Chip size 1.6x1.4x0.1mm
Typical Noise Figure
Main Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB comp.
Min Typ Max Unit
1
2 GHz
28
dB
1.45
dB
15
dBm
Ref. : DSCHA38012328 - 23 Nov 12
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]