CHA3689 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 12.5-30GHz Low Noise Amplifier

CHA3689
RoHS COMPLIANT
12.5-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3689 is a three-stage self biased
wide band monolithic low noise amplifier.
Vd1
Vd2
RFin
The circuit is manufactured with a standard
P-HEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
B
Vd3
RFout
D
Main Features
■ Broadband performance 12.5-30GHz
■ 2.0dB noise figure
■ 26dB gain (12.5-26GHz)
■ 26dBm output IP3 (18-30GHz)
■ Low DC power consumption
■ Chip size: 2,45 x 1,21 x 0,1 mm
Gain and NF @ 120 mA (BD grounded)
32
30
28
26
24
Gain
22
20
18
16
14
12
10
8
NF
6
4
2
0
12
14
16
18
20
22
24
26
28
30
Frequency (GHz)
On wafer typical measurements
Main Characteristics
Tamb = +25°C, Vd1=Vd2=Vd3 = +4V Pads B, D = GND (High current configuration)
Symbol
Parameter
NF
Noise figure
G
Gain
P1dB Output power at 1dB gain compression
Min Typ Max Unit
2.0
2.5
dB
23
26
dB
14
15
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA36897082 - 23 Mar 07
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]