CHA3689-99F_15 Datasheet, PDF (1/16 Pages) United Monolithic Semiconductors – 12.5-30GHz Low Noise Amplifier

CHA3689-99F
RoHS COMPLIANT
12.5-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3689-99F is a three-stage self
biased wide band monolithic low noise
Vd1
Vd2
amplifier.
RFin
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
B
electron beam gate lithography.
It is available in chip form.
Main Features
Vd3
RFout
D
■ Broadband performance: 12.5-30GHz
■ 2.0dB noise figure
■ 26dB gain (12.5-26GHz)
■ 26dBm output IP3 (18-30GHz)
■ Low DC power consumption
■ DC bias: Vd=4 Volt @ Id= 90 /120mA
■ Chip size : 2.45 x 1.21 x 0.1mm
Gain
NF
On wafer typical measurements @ 120mA
Main Characteristics
Tamb = +25°C, Vd1=Vd2=Vd3 = +4V Pads B, D = GND (High current configuration)
Symbol
Parameter
Min Typ Max
Freq Frequency range
12.5
30
Gain Linear Gain
26
NF Noise Figure
2
2.6
Pout1dB Output Power @1dB comp.
14
15
Unit
GHz
dB
dB
dBm
Ref. : DSCHA36891035 - 07 Feb 11
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]