CHA3688AQDG_15 Datasheet, PDF (1/18 Pages) United Monolithic Semiconductors – 12.5-30GHz Low Noise Amplifier

CHA3688aQDG
RoHS COMPLIANT
12.5-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3688aQDG is a three-stage
self-biased wide band monolithic low noise
amplifier monolithic circuit.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
U_UMMS_S
A_A3₃6₆8₆₈₇₈8_AA
Y_YY_YW_WW_W_G
Main Features
■ Broadband performances: 12.5-30GHz
■ 2.1dB noise figure
■ 26dB gain
■ 26dBm Output IP3
■ DC bias: Vd = 4V @ Id = 85 / 115mA
■ 24L-QFN4x4
■ MSL1
Main Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
OIP3 3rd order intercept point (16 - 30GHz)
Min Typ Max Unit
12.5
30 GHz
21
26
dB
2.1
2.5 dB
24
26
dBm
Ref. : DSCHA3688aQDG1035 - 07 Feb 11
1/18
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]