CHA3688AQDG Datasheet, PDF (1/16 Pages) United Monolithic Semiconductors – 12.5-30GHz Low Noise Amplifier

CHA3688aQDG
RoHS COMPLIANT
12.5-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3688aQDG is a three-stage
self-biased wide band monolithic low noise
amplifier.
The circuit is manufactured with a standard
P-HEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is available in lead-free package.
UMS
A366878A
YYWWG
Main Features
■ Broadband performance 12.5 - 30GHz
■ 2.1dB noise figure
■ 26dB gain
■ 26dBm Output IP3
■ Low DC power consumption
■ 24L-QFN4x4 SMD package
■ RF ports ESD protected (see page 14)
Gain and NF @ 115mA (BD grounded)
30
28
26
24
22
Gain
20
18
16
14
12
10
8
NF
6
4
2
0
12
14
16
18
20
22
24
26
28
30
Frequency (GHz)
Main Characteristics
Tamb = +25°C, Vd1=Vd2=Vd3 = +4V Pads: B, D = GND (High current configuration)
Symbol
Parameter
NF
Noise figure
G
Gain
OIP3 3rd order intercept point (16 - 30GHz)
Min Typ Max Unit
2.1 2.5 dB
21
26
dB
24
26
dBm
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3688aQDG8073 - 13 Mar 08
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]