CHA3667A_15 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 7-20GHz Medium Power Amplifier

CHA3667a
RoHS COMPLIANT
7-20GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
Vd
The CHA3667a is a wide band monolithic medium
power amplifier.
It is designed for a wide range of applications,
from military to commercial communication
systems. The circuit is manufactured with a
Power pHEMT process, 0.15µm gate length, via
hole through the substrate.
It is ESD protected on RF ports thanks to DC
specific filter circuits.
It is supplied in chip form.
Main Features
■ Broadband performance 7-20GHz
■ Self biased
■ 23dB gain @ 2.7dB noise figure
■ 20 dBm Output power at 1dB compression
■ DC power consumption, 175mA @ 4.2V
■ Chip size : 2,45 x 1,21 x 0,1mm
RFin
RFout
On wafer typical measurements
30
S21
25
20
15
10
5
0
-5
-10
S11
-15
S22
-20
-25
-30
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Frequency ( GHz)
Main Characteristics
Tamb = +25°C
Symbol
Parameter
Min Typ Max Unit
Fop Input frequency range
7
20 GHz
G Small signal gain
23
dB
NF Noise Figure
2.7 3.5 dB
P-1dB Output power at 1dB gain compression
21
23
dBm
Id Bias current
130 175 220 mA
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA3667a0158 - 07 Jun 10
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]