CHA3667AQDG_15 Datasheet, PDF (1/16 Pages) United Monolithic Semiconductors – 7-20GHz Medium Power Amplifier

CHA3667aQDG
RoHS COMPLIANT
7-20GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA3667aQDG is a wide band
monolithic medium power amplifier. It is
designed for a wide range of applications,
from military to commercial communication
systems.
The circuit is manufactured with a Power-
pHEMT process, 0.15µm gate length, via
hole through the substrate.
It is ESD protected on RF ports thanks to
DC specific filter circuits.
It is available in lead-free SMD package.
UMS
A3667A
YYWW
Vd
Main Features
RFin
RFout
■ Broadband performance 7-20GHz
■ Self-biased
■ 23dB gain @ 2.7dB noise figure
■ 20dBm Output power @1dBcp
■ DC power consumption, 175mA @ 4.2V
■ 24L-QFN4X4 SMD package
■ MSL1
Main Characteristics
Tamb = +25°C, Vd= 4.2V
Symbol
Parameter
Min Typ Max
Fop Input frequency range
7
20
G Small signal gain
21
23
NF Noise Figure
2.7 3.5
P-1dB Output power at 1dB gain compression
18.5 20
Id Bias current
130 175 220
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Unit
GHz
dB
dB
dBm
mA
Ref. : DSCHA3667aQDG0158 - 07 Jun 10
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]