CHA3667AQDG Datasheet, PDF (1/14 Pages) United Monolithic Semiconductors – 7-20GHz Medium Power Amplifier

CHA3667aQDG
RoHs COMPLIANT
7-20GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA3667aQDG is a wide band
monolithic medium power amplifier.
UMS
A3667A
It is designed for a wide range of
YYWWG
applications, from military to commercial
communication systems.
The circuit is manufactured with a Power-
HEMT process, 0.15µm gate length, via hole
Vd
through the substrate.
RFin
RFout
It is ESD protected on RF ports thanks to DC
specific filter circuits.
It is available in lead-free SMD package.
Main Features
■ Broadband performance 7-20GHz
■ Self-biased
■ 23dB gain @2.7dB noise figure
■ 20dBm Output power@1dB compression
■ DC power consumption, 175 mA @4.2V
■ 24L-QFN4X4 SMD package
■ ESD protected
Main Characteristics
Tamb. = 25°C, Vd = 4.2V
Symbol
Parameter
S Parameters versus frequency
25
20
S21
15
10
5
0
-5
-10
-15
S11
-20
S22
-25
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Freq ( GHz)
Min Typ Max Unit
Fop Input frequency range
7
20 GHz
G Small signal gain
23
dB
NF Noise Figure
2.7
dB
P-1dB Output power at 1dB gain compression
20
dBm
Id Bias current
175
mA
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions
Ref: DSCHA3667aQDG7296 - 23 Oct 07
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]