CHA3667A Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 7-20GHz Medium Power Amplifier

CHA3667a
7-20GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3667a is a wide band monolithic
medium power amplifier.
It is designed for a wide range of
RFin
applications, from military to commercial
communication systems. The circuit is
manufactured with a Power-HEMT process,
0.15µm gate length, via hole through the
substrate.
It is ESD protected on RF ports thanks to DC
specific filter circuits .
It is supplied in chip form.
Main Features.
■ Broadband performance 7-20GHz
■ Self biased
■ 23dB gain @2.7dB noise figure
■ 20 dBm Output power at 1dB compression
■ DC power consumption, 175 mA @4.2V
■ Chip size:2,45 x1,21x0,1 mm
Vd
RFout
S21
S11
S22
Main Characteristics
Tamb. = 25°C, Vd = 4.2V
Symbol
Parameter
Min Typ Max Unit
Fop Input frequency range
7
20 GHz
G Small signal gain
23
dB
NF Noise Figure
2.7
dB
P-1dB Output power at 1dB gain compression
20
dBm
Id Bias current
175
mA
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Electrical Characteristics on wafer
Ref. : DSCHA3667a7296 - 23 Oct 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]