CHA3666 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 6-17GHz Low Noise Amplifier

CHA3666
RoHS COMPLIANT
6-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
VD1
The CHA3666 is a two-stage self biased
wide band monolithic low noise amplifier.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and ^RFin
electron beam gate lithography.
VD2
RFout
UMS
P1
P2 N2
Main Features
24,0
22,0
■ Broadband performance 6-17GHz
20,0
■ 1.8dB noise figure
18,0
■ 26dBm 3^rd order intercept point
16,0
■ 17dBm power at 1dB compression
14,0
12,0
■ 21dB gain
10,0
■ Low DC power consumption
8,0
6,0
4,0
2,0
0,0
4,00
Main Characteristics
Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND
Gain
6,00 8,00
NF
10,00 12,00 14,00 16,00 18,00
Symbol
Parameter
NF
Noise figure
G
Gain
IP3 3rd order intercept point
Min Typ Max Unit
1.8
2
dB
19
21
dB
26
dBm
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3666-8108 - 17 Apr 08
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]