CHA3666-SNF_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 5.8-16GHz Low Noise Amplifier

CHA3666-SNF
5.8-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA3666-SNF is a two-stage self
biased wide band monolithic low noise
amplifier.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in lead-free, hermetic package
compatible for space application.
Main Features
■ Broadband performance 5.8-16GHz
■ 2.8dB maximum noise figure
■ 24dBm 3^rd order intercept point
■ 16dBm power at 1dB compression
■ 20dB gain
■ Low DC power consumption
■ 12L-Glass/metal hermetic package
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min Typ Max Unit
NF
Noise figure
2.1
2.8 dB
G
Small signal Gain
16
20
dB
IP3
3rd order intercept point
24
dBm
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3666-SNF2353 - 18 Dec 12
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]