CHA3666-SNF Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 5.8-16GHz Low Noise Amplifier

CHA3666-SNF
5.8-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in hermetic package
Description
The CHA3666-SNF is a two-stage self-
biased wide band monolithic low noise
amplifier.
The circuit is manufactured with a standard
P-HEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in lead-free, hermetic package
compatible for space application.
Main Features
■ Broadband performance 5.8-16GHz
■ 2.8dB maximum noise figure
■ 24dBm 3^rd order intercept point
■ 16dBm power at 1dB compression
■ 20dB gain
■ Low DC power consumption
■ 12L-Glass/metal hermetic package
24
22
20
18
16
14
12
10
8
6
4
2
0
4
Gain & NF @ Vd=4V
Gain
NF
6
8
10
12
14
16
Frequency (GHz)
Main Characteristics
Tamb = +25°C, Vd = +4V, Id=80mA
Symbol
NF
G
IP3
Parameter
Noise figure
Smal signal Gain
3rd order intercept point
Min Typ Max Unit
2.1 2.8 dB
16
20
dB
24
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3666-SNF7208 - 27 Jul 07
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]