CHA3666-QAG_15 Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – 5.8-17GHz Low Noise Amplifier

CHA3666-QAG
RoHS COMPLIANT
5.8-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3666-QAG is a two-stage self-biased
wide band monolithic low noise amplifier.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in lead-free package.
Main Features
■ Broadband performance 6-17GHz
■ 1.8dB noise figure
■ 26dBm 3^rd order intercept point
■ 16dBm power at 1dB compression
■ 21dB gain
■ Low DC power consumption
■ 16L-QFN3X3 SMD package
Gain & NF @Config; P1=N2=grounded
24
22
20
18
16
14
12
10
8
6
4
2
0
4 6 8 10 12 14 16 18 20
Frequency (GHz)
Main Characteristics
Temp = +25°C, Vd1=Vd2= +4V, P1& N2=GND
Symbol
Parameter
NF Noise figure
G
Gain
IP3 3rd order intercept point
Min Typ Max Unit
1.8
2
dB
19
21
dB
26
dBm
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3666-QAG8108 - 17 Apr 08
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]