CHA3660-QQG Datasheet, PDF (1/16 Pages) United Monolithic Semiconductors – 21-27.5GHz Medium Power Amplifier

CHA3660-QQG
21-27.5GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3660-QQG is a 3 stage monolithic
medium power amplifier, which produces
25dB gain for 19dBm output power.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
UMS
A3660
YYWW
Main Features
■ Broadband performances: 21-27.5GHz
■ 19dBm Pout at 1dB compression
■ 25dB gain
■ 30dBm OTOI
■ DC bias: Vd= 4.0V, Id= 180mA
■ 16L-QFN4x4 (QQG)
■ MSL1
Output Power & PAE versus Frequency
30
28
26
24
22
20
18
16
14
Psat
P-1dB
PAE sat
12
10
17
18
19
20
21
22
23
24
25
26
27
28
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
P-1dB Output Power @1dB comp.
OTOI 3^rd order Intercept point
Min Typ Max Unit
21.0
27.5 GHz
25
dB
19
dBm
30
dBm
Ref. : DSCHA3660-QQG5357 - 23 Dec 15
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]