CHA3514 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 6-18GHz 4 bit Digital Variable Amplifier

CHA3514
RoHS COMPLIANT
6-18GHz 4 bit Digital Variable Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3514 is composed by a two stage
travelling wave amplifier followed by a four
steps digital attenuator. It is designed for
defense applications. The backside of the
chip is both RF and DC grounded. This helps
to simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
AB
10A
5A 2.5A
20A
RF
10dB
5dB 2.5dB _20dB
IN
DE
10B
5B 2.5B
20B
Typical on wafer Measurements
Gain versus attenuation states
Main Features
■ Performances: 6-18GHz
■ 19dBm saturated output power
■ 13 dB gain
■ 4bit attenuator for 39.5dB dynamic range
■ DC power consumption, 190mA @ 4.5V
■ Chip size: 5.54 x 2.30 x 0.1 mm
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min Typ Max Unit
Fop
Operating frequency range
6
18
GHz
G
Small signal gain @ Attenuator state 0dB
13
dB
Psat Saturated Output power @ Attenuator state 0dB
19
dBm
ATT dyn
Attenuator range with 4bit
39.5
dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA35146278 - 05 Oct 06
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]